Western Digital is working by itself low-latency flash reminiscence, which gives greater efficiency and endurance in comparison with standard 3D NAND and is in the end designed to stop the storage of Optane. .
At Storage Subject Day this week, Western Digital talked about its new low latency flash NAND. The expertise is alleged to be someplace between 3D NAND and DRAM, very similar to Intel's Optane reminiscence and Samsung's Z-NAND. Just like these applied sciences, based on Western Digital, the LLF reminiscence has a "microsecond" entry time utilizing 1-bit per cell and 2-bit per cell structure.
The producer acknowledges that its LLF is a customized system that may be very quick as a result of it’s designed for efficiency. The storage prices ten instances lower than DRAM, however 20 instances greater than 3D NAND (not less than primarily based on at this time's estimates) by way of costs per GB. Subsequently, it’s most likely solely utilized by chosen purposes for information facilities or high-end purposes workstations, just like at this time's Optane and Z-NAND.
Western Digital doesn’t reveal all the main points about low latency flash reminiscence, and it’s unimaginable to say if it has something to do with Toshiba's XL Flash as a low-latency 3D NAND final yr was launched in addition to different specialised sorts of lightning. After all, the corporate doesn’t hesitate to speak about precise merchandise primarily based on their LLF storage or when they need to turn into obtainable. In the meantime, Western Digital LLF belongs to the BICS4 era of 3D NAND reminiscences and might due to this fact nonetheless be produced at this time.
Whereas Western Digital's low-latency flash competes with Samsung's Intel Optane and Z-NAND SSDs, the corporate doesn’t name LLF storage class reminiscence (SCM).
Lengthy-term Western Digital works on inside SCM on a ReRAM foundation (19459014) and on HP (19459015) on SCM with a memristor. Contemplating that R & D cycles take a few years, the corporate appears to deal with purposes that require capability and efficiency with a extra acquainted NAND flash earlier than deploying next-gen applied sciences.